irf5305s/l hexfet ? power mosfet pd - 91386c l advanced process technology l surface mount (irf5305s) l low-profile through-hole (irf5305l) l 175c operating temperature l fast switching l p-channel l fully avalanche rated 4/1/99 s d g absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf5305l) is available for low- profile applications. description v dss = -55v r ds(on) = 0.06 w i d = -31a 2 d pak to-262 parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 thermal resistance c/w parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v ? -31 i d @ t c = 100c continuous drain current, v gs @ -10v ? -22 a i dm pulsed drain current ?? -110 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 280 mj i ar avalanche current ? -16 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ?? -5.8 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c
irf5305s/l 2 www.irf.com ? v dd = -25v, starting t j = 25c, l = 2.1mh r g = 25 w , i as = -16a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ** when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ? i sd -16a, di/dt -280a/s, v dd v (br)dss , t j 175c ? pulse width 300s; duty cycle 2%. ? uses irf5305 data and test conditions source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.034 CCC v/c reference to 25c, i d = -1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.06 w v gs = -10v, i d = -16a ? v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 8.0 CCC CCC s v ds = -25v, i d = -16a ? CCC CCC -25 a v ds = -55v, v gs = 0v CCC CCC -250 v ds = -44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 63 i d = -16a q gs gate-to-source charge CCC CCC 13 nc v ds = -44v q gd gate-to-drain ("miller") charge CCC CCC 29 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd = -28v t r rise time CCC 66 CCC i d = -16a t d(off) turn-off delay time CCC 39 CCC r g = 6.8 w t f fall time CCC 63 CCC r d = 1.6 w, see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 1200 CCC v gs = 0v c oss output capacitance CCC 520 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 250 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) i gss ns i dss drain-to-source leakage current nh 7.5 l s internal source inductance parameter min. typ. max. u nits conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.3 v t j = 25c, i s = -16a, v gs = 0v ? t rr reverse recovery time CCC 71 110 ns t j = 25c, i f = -16a q rr reverse recovery charge CCC 170 250 nc di/dt = -100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) a s d g -31 -110
irf5305s/l www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 d ds 20s pulse w idth t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1000 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse w idth t = 175c c 1 10 100 45678910 t = 25c j t = 175c j a v = -25v 20s pulse w idth ds gs -v , gate-to-source volta g e ( v ) d -i , drain-to-source c urrent (a) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , d rain-to-s ource o n r esistance ds(on) (normalized) a i = -2 7a v = -10v d gs fig 2. typical output characteristics fig 4. normalized on-resistance vs. temperature t j = 25c t j = 175c
irf5305s/l 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) a v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss g s g d ds rss g d oss ds g d c iss c oss c rss ds -v , drain-to-source volta g e ( v ) 0 4 8 12 16 20 0 102030405060 q , total g ate char g e ( nc ) g a for test circuit s ee figure 13 v = -44v v = -28v i = -16 a gs -v , g ate-to-source voltage (v) d ds ds 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain volta g e ( v ) t = 175c j 1 10 100 1000 1 10 100 ope ration in this area limite d by r ds(on) 100s 1ms 10ms a t = 25c t = 175c sin g le p u ls e c j ds -v , drain-to-source volta g e ( v ) d -i , drain current (a)
irf5305s/l www.irf.com 5 fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. v ds 90% 10% v gs t d(on) t r t d(off) t f + - 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf5305s/l 6 www.irf.com fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 j e , single pulse avalanche energy (m j) as a startin g t , junction temperature ( c ) v = -25v i top -6.6a -11a bo tto m -16a dd d
irf5305s/l www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets
irf5305s/l 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) re f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - ga te 2 - d r ain 3 - s ou rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irf5305s/l www.irf.com 9 package outline to-262 outline to-262 part marking information
irf5305s/l 10 www.irf.com tape & reel information d 2 pak 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.42 9) 10.70 (.42 1) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.06 3) 1.50 (.05 9) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 4/99
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